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Title: Giant spin torque in hybrids with anisotropic p-d exchange interaction

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here, I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10{sup 4}‚ÄČA/cm{sup 2} in ferromagnet/semiconductor hybrids. The experimental observation of the anisotropic torque will facilitate the integration of ferromagnetism into semiconductor electronics.
Authors:
 [1]
  1. A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universitat Dortmund, D-44227 Dortmund (Germany)
Publication Date:
OSTI Identifier:
22283031
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COMPARATIVE EVALUATIONS; CURRENT DENSITY; DOMAIN STRUCTURE; ELECTRIC CURRENTS; EXCHANGE INTERACTIONS; FERROMAGNETISM; HOLES; MAGNETIC MOMENTS; MEMORY DEVICES; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION; TORQUE