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Title: A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

A supersaturation of nitrogen atoms is found in the surface layer of microstructured silicon after femtosecond (fs) laser irradiation in NF{sub 3}. The average nitrogen concentration in the uppermost 50 nm is about 0.5 ± 0.2 at. %, several orders of magnitude higher than the solid solubility of nitrogen atoms in silicon. The nitrogen-hyperdoped silicon shows high crystallinity in the doped layer, which is due to the repairing effect of nitrogen on defects in silicon lattices. Nitrogen atoms and vacancies can be combined into thermal stable complexes after fs laser irradiation, which makes the nitrogen-hyperdoped silicon exhibit good thermal stability of optical properties.
Authors:
; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)
  2. State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433 (China)
  3. Spectrophotometry Laboratory, National Institute of Metrology, Beijing 100013 (China)
Publication Date:
OSTI Identifier:
22283028
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CONCENTRATION RATIO; CRYSTAL DOPING; LASER RADIATION; LAYERS; MICROSTRUCTURE; NITROGEN; NITROGEN FLUORIDES; OPTICAL PROPERTIES; PHASE STABILITY; SILICON; SOLIDS; SUPERSATURATION; SURFACES; VACANCIES