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Title: Epitaxial growth of large-area bilayer graphene on Ru(0001)

Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moiré pattern with a periodicity of ∼21.5 nm and a mixture of AA- and AB-stacking. The √3 × √3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized π-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22283023
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRONS; EPITAXY; GRAPHENE; LAYERS; MIXTURES; PERIODICITY; RUTHENIUM; SCANNING TUNNELING MICROSCOPY; STRAINS; SURFACES