Epitaxial growth of large-area bilayer graphene on Ru(0001)

Que, Yande; Xiao, Wende; Fei, Xiangmin; Chen, Hui; Du, S. X.; Huang, Li

doi:10.1063/1.4868021

Title: Epitaxial growth of large-area bilayer graphene on Ru(0001)

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Abstract

Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moiré pattern with a periodicity of ∼21.5 nm and a mixture of AA- and AB-stacking. The √3 × √3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized π-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.

Authors:

Que, Yande; Xiao, Wende; Fei, Xiangmin; Chen, Hui; Du, S. X.; Huang, Li ^[1]

Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

Publication Date:: Mon Mar 03 00:00:00 EST 2014

OSTI Identifier:: 22283023

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRONS; EPITAXY; GRAPHENE; LAYERS; MIXTURES; PERIODICITY; RUTHENIUM; SCANNING TUNNELING MICROSCOPY; STRAINS; SURFACES

Citation Formats


                    Que, Yande, Xiao, Wende, Fei, Xiangmin, Chen, Hui, Du, S. X., Gao, H.-J., E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn, Huang, Li, and Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190. Epitaxial growth of large-area bilayer graphene on Ru(0001).  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4868021.

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                    Que, Yande, Xiao, Wende, Fei, Xiangmin, Chen, Hui, Du, S. X., Gao, H.-J., E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn, Huang, Li, & Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190. Epitaxial growth of large-area bilayer graphene on Ru(0001).  United States.  https://doi.org/10.1063/1.4868021

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                    Que, Yande, Xiao, Wende, Fei, Xiangmin, Chen, Hui, Du, S. X., Gao, H.-J., E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn, Huang, Li, and Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190. 2014.  
        "Epitaxial growth of large-area bilayer graphene on Ru(0001)".  United States.  https://doi.org/10.1063/1.4868021.

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@article{osti_22283023,

  title        = {Epitaxial growth of large-area bilayer graphene on Ru(0001)},

  author       = {Que, Yande and Xiao, Wende and Fei, Xiangmin and Chen, Hui and Du, S. X. and Gao, H.-J., E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn and Huang, Li and Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190},

  abstractNote = {Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moiré pattern with a periodicity of ∼21.5 nm and a mixture of AA- and AB-stacking. The √3 × √3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized π-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.},

  doi          = {10.1063/1.4868021},

  url          = {https://www.osti.gov/biblio/22283023},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 9,

  volume       = 104,

  place        = {United States},

  year         = {Mon Mar 03 00:00:00 EST 2014},

  month        = {Mon Mar 03 00:00:00 EST 2014}

}

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