Negative differential resistance phenomena in colloidal quantum dots-based organic light-emitting diodes
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Center for Micro and Nano Technology, School of Physics, Beijing Institute of Technology, Beijing 100081 (China)
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China)
- Wuhan Jiayuan Quantum Dots Co. Ltd., Wuhan 430075, Hubei Province (China)
The influence of ligands on the electrical behavior of CdSe/ZnS core-shell colloidal quantum dots (CQDs)-based organic light-emitting diodes is presented. Negative differential resistance (NDR) phenomena at room temperature are observed from single-layer device ITO/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/CQDs/Al in which the original capping ligand tri-n-octylphosphine oxide (TOPO) of CQDs is exchanged with oleylamine, as well as in both bilayer device ITO/PEDOT:PSS/CQDs/BCP(10 nm)/Al and trilayer device ITO/PEDOT:PSS/CQDs/BCP(10 nm)/Alq{sub 3}(10 nm)/Al. However, such a kind of NDR phenomenon disappears if TOPO is exchanged with hexadecylamine. Therefore, NDR phenomenon depends greatly on the ligands of the CQDs, and the origin of NDR from these devices is discussed.
- OSTI ID:
- 22280628
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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