skip to main content

SciTech ConnectSciTech Connect

Title: Direct comparison of graphene devices before and after transfer to different substrates

The entire graphene field-effect-transistor devices first fabricated on SiO{sub 2}/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO{sub 2}/Si wafers, the mobility, generally, is comparable, and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g., SrTiO{sub 3} or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO{sub 2}/Si substrates for patterning but also provides a convenient way to study the effects of various substrates on graphene electronic properties.
Authors:
; ; ; ;  [1]
  1. Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States)
Publication Date:
OSTI Identifier:
22280627
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTIONS; SILICON; SILICON OXIDES; STRONTIUM TITANATES; SUBSTRATES; SURFACES