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Title: High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10{sup 5}, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10{sup 4} s.
Authors:
;  [1] ; ;  [2] ;  [1] ;  [3]
  1. Nanoscience Centre, University of Cambridge, 11 J J Thomson Avenue, Cambridge CB3 OFF (United Kingdom)
  2. Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22280625
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; COPOLYMERS; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; GLASS; HYSTERESIS; LAYERS; LEAKAGE CURRENT; MEMORY DEVICES; NANOSTRUCTURES; PERFORMANCE; POLARIZATION; SUBSTRATES; THIN FILMS; TRANSISTORS; ZINC OXIDES