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Title: Fermi-dirac and random carrier distributions in quantum dot lasers

Using experimental gain and emission measurements as functions of temperature, a method is described to characterise the carrier distribution of radiative states in a quantum dot (QD) laser structure in terms of a temperature. This method is independent of the form of the inhomogeneous dot distribution. A thermal distribution at the lattice temperature is found between 200 and 300 K. Below 200 K the characteristic temperature exceeds the lattice temperature and the distribution becomes random below about 60 K. This enables the temperature range for which Fermi-Dirac statistics are applicable in QD laser threshold calculations to be identified.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. School of Physics and Astronomy, Cardiff University, Queens Buildings, the Parade, Cardiff CF243AA (United Kingdom)
  2. Tyndall National Institute, Lee Maltings, Cork (Ireland)
  3. (Ireland)
Publication Date:
OSTI Identifier:
22280616
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; CHARGE CARRIERS; FERMI STATISTICS; GAIN; LASERS; PHOTON EMISSION; QUANTUM DOTS; RANDOMNESS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K