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Title: Morphology evolution in strain-compensated multiple quantum well structures

Morphology evolution in (In,Ga)As-Ga(As,P) strain-compensated multilayer structures is studied. The effects of nanoscale interface corrugation and phase separation are evident after the third period of the multilayer structure and become more pronounced with each new stack until the sixth period. Then, the interface stabilizes pointing to the formation of strain-balanced equilibrium interface structure. The epitaxial structure remains defect-free up to the maximum number (twenty) of periods studied. In a structure with a high lattice mismatch between the neighboring layers, In{sub 0.40}Ga{sub 0.60}As/GaAs{sub 0.85}P{sub 0.15}, clusters of dislocations are revealed already in the third period. The observed phenomena are critical for proper engineering of optoelectronic devices.
Authors:
;  [1] ;  [2]
  1. VI Systems GmbH, Hardenbergstra├če 7, Berlin D-10623, Germany and A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)
  2. University of Notre Dame, 112 North Notre Dame Avenue, South Bend, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
22280608
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERFACES; LAYERS; MORPHOLOGY; QUANTUM WELLS; STRAINS