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Title: Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier

We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlO{sub x} nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlO{sub x}-NOL/Pt. Analysis of NC formation was based on in situ conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.
Authors:
;  [1]
  1. Department of Electronic Engineering, Tohoku University, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
22280605
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANISOTROPY; ASYMMETRY; ATOMIC FORCE MICROSCOPY; COBALT; INTERFACES; LAYERS; MAGNETORESISTANCE; NANOSTRUCTURES; OXIDATION; PLATINUM; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY