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Title: Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. CEMES CNRS-UPR 8011, Université de Toulouse, 31055 Toulouse (France)
  2. IES CNRS-UMR 5214, 34095 Montpellier (France)
  3. INA-Universidad de Zaragoza, 50018 Zaragoza (Spain)
Publication Date:
OSTI Identifier:
22280602
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ASYMMETRY; COMPARATIVE EVALUATIONS; HETEROJUNCTIONS; IMAGES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; LASERS; LAYERS; MOLECULAR BEAM EPITAXY; PHASE STABILITY; PHASE STUDIES; STRAINS; TRANSMISSION ELECTRON MICROSCOPY