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Title: Gamma ray irradiated silicon nanowires: An effective model to investigate defects at the interface of Si/SiOx

The effect of gamma ray irradiation on silicon nanowires was investigated. Here, an additional defect emerged in the gamma-ray-irradiated silicon nanowires and was confirmed with electron spin resonance spectra. {sup 29}Si nuclear magnetic resonance spectroscopy showed that irradiation doses had influence on the Q{sup 4} unit structure. This phenomenon indicated that the unique core/shell structure of silicon nanowires might contribute to induce metastable defects under gamma ray irradiation, which served as a satisfactory model to investigate defects at the interface of Si/SiOx.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices and Collaborative Innovation, Center of Suzhou Nano Science and Technology, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123 (China)
  2. State Key Laboratory of Co-ordination Chemistry, Department of Polymer Science and Engineering, Nanjing University, No. 20, Hankou Road, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22280592
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ELECTRON SPIN RESONANCE; GAMMA RADIATION; INTERFACES; IRRADIATION; NMR SPECTRA; NUCLEAR MAGNETIC RESONANCE; PHYSICAL RADIATION EFFECTS; QUANTUM WIRES; RADIATION DOSES; SILICON; SILICON 29; SILICON OXIDES