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Title: Effects of neutron irradiation of ultra-thin HfO{sub 2} films

Neutron irradiation at low fluence decreases the Pb-type and E′ defect levels in ultra-thin hafnium dioxide films because electrons can fill existing states. These electrons come from electron-hole pairs generated by neutron interactions with silicon and oxygen. Thus, a low fluence of neutrons “anneals” the sample. However, when neutron fluence increases, more neutrons collide with oxygen atoms and cause them to leave the lattice or to transmute into different atoms. This causes the E′ states to increase. As defect-state concentrations increase, leakage currents increase, but since the E′ is much lower than the Pb concentration, this is not a dominant factor.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Applied Materials, Sunnyvale, California 94085 (United States)
  3. Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  4. Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22280590
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; ELECTRONS; HAFNIUM OXIDES; HOLES; IRRADIATION; LEAKAGE CURRENT; NEUTRON FLUENCE; OXYGEN; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON; THIN FILMS