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Title: Penetration depth and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} polycrystalline films by ferromagnetic resonance and spin pumping

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir{sub 20}Mn{sub 80} and spin flipping for Fe{sub 50}Mn{sub 50}.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. SPINTEC, UMR 8191 CNRS/INAC-CEA/UJF-Grenoble 1/Grenoble-INP, F-38054 Cedex (France)
  2. Mat. Sci. and Engn. Program, Department of Appl. Phys. and Appl. Math., Columbia University, New York, New York 10027 (United States)
Publication Date:
OSTI Identifier:
22280584
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANISOTROPY; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ELECTRIC CURRENTS; FERROMAGNETIC RESONANCE; IRIDIUM ALLOYS; IRON ALLOYS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; MANGANESE BASE ALLOYS; PENETRATION DEPTH; POLYCRYSTALS; SPIN; TEMPERATURE RANGE 0273-0400 K; THIN FILMS