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Title: Sapphire decomposition and inversion domains in N-polar aluminum nitride

Transmission electron microscopy (TEM) techniques and potassium hydroxide (KOH) etching confirmed that inversion domains in the N-polar AlN grown on c-plane sapphire were due to the decomposition of sapphire in the presence of hydrogen. The inversion domains were found to correspond to voids at the AlN and sapphire interface, and transmission electron microscopy results showed a V-shaped, columnar inversion domain with staggered domain boundary sidewalls. Voids were also observed in the simultaneously grown Al-polar AlN, however no inversion domains were present. The polarity of AlN grown above the decomposed regions of the sapphire substrate was confirmed to be Al-polar by KOH etching and TEM.
Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
  2. HexaTech, Inc., 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560 (United States)
Publication Date:
OSTI Identifier:
22280581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; DECOMPOSITION; DOMAIN STRUCTURE; ETCHING; HYDROGEN; INTERFACES; POTASSIUM HYDROXIDES; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VOIDS