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Title: Probing graphene defects and estimating graphene quality with optical microscopy

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [2] ;  [3]
  1. SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of)
  2. (HINT), Suwon 440-746 (Korea, Republic of)
  3. (SKKU), Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22280575
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMIC FORCE MICROSCOPY; COPPER; DISLOCATIONS; GRAPHENE; INTERFACES; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY