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Title: Thermally-driven H interaction with HfO{sub 2} films deposited on Ge(100) and Si(100)

In the present work, we investigated the thermally-driven H incorporation in HfO{sub 2} films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO{sub 2}/substrate interface region (at 300 °C) and through the whole HfO{sub 2} layer (400–600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO{sub 2} films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2] ;  [4]
  1. Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil)
  2. (Brazil)
  3. Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil)
  4. Instituto de Química, UFRGS, Porto Alegre 91509-900 (Brazil)
Publication Date:
OSTI Identifier:
22280574
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL STRUCTURE; DESORPTION; DEUTERIUM; GERMANIUM; HAFNIUM OXIDES; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; UPTAKE