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Title: Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3] ;  [4] ;  [1] ;  [2]
  1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  4. Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22280572
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; OXYGEN; PHASE STABILITY; SURFACES; THIN FILMS; TITANIUM; TITANIUM OXIDES; TRANSISTORS