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Title: High performance continuous wave 1.3 μm quantum dot lasers on silicon

We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.
Authors:
;  [1] ;  [2] ; ; ; ;  [3] ; ;  [1] ;  [4]
  1. Materials Department, University of California Santa Barbara, California 93106 (United States)
  2. Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106 (United States)
  3. IQE, Inc., Bethlehem, Pennsylvania 18015 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22280569
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; INDIUM ARSENIDES; MODULATION; MOLECULAR BEAM EPITAXY; PERFORMANCE; QUANTUM DOTS; SILICON; SOLID STATE LASERS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; WAVEGUIDES