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Title: Three-region characteristic temperature in p-doped quantum dot lasers

We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided into three regions by its characteristic temperature (T{sub 0}): negative, infinite, and positive T{sub 0} regions. Furthermore, the T{sub 0} region width is dependent on the cavity length: the longer cavity length of the QD lasers correspondingly the wider T{sub 0} region. Additionally, for the broad area laser, the threshold modal gains of the lasers with different cavity lengths can be fitted by an empirical expression as a function of the threshold current density, when at the temperatures of 30, 50, and 70 °C. We find that the transparency current density (J{sub tr}) remains almost unchanged under different temperatures according to the extracted parameters from these fitted results, which indicates that J{sub tr} plays an important role in balancing the T{sub 0} between negative region and positive one.
Authors:
 [1] ;  [2] ; ;  [3] ; ;  [1] ;  [4]
  1. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. (Singapore)
  3. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  4. NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electric Engineering, Nanyang Technological University, Singapore, 639798 (Singapore)
Publication Date:
OSTI Identifier:
22280568
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENT DENSITY; DOPED MATERIALS; GAIN; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; LENGTH; OPACITY; QUANTUM DOTS; SOLID STATE LASERS; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT