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Title: Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.
Authors:
 [1] ; ; ;  [1] ;  [2]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22280559
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; POLARIZATION; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES