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Title: Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ; ; ;  [1] ;  [2]
  1. College of Physics, Qingdao University, Qingdao 266071 (China)
  2. (Qingdao University), Qingdao 266071 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22280558
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CALCINATION; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; MORPHOLOGY; NANOSTRUCTURES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUARTZ; SUBSTRATES; SURFACES; THIN FILMS; TIN OXIDES; ZINC OXIDES