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Title: High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
Authors:
;  [1] ; ; ;  [2] ; ;  [3]
  1. Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  2. SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France)
  3. Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités P. et M. Curie and Paris-Diderot, 24, rue Lhomond, 75231 Paris Cedex 05 (France)
Publication Date:
OSTI Identifier:
22280548
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CAPACITANCE; CHARGE TRANSPORT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TEMPERATURE; INTERFACES; MICROWAVE RADIATION; QUANTIZATION; QUANTUM WIRES; RADIOWAVE RADIATION; SILICON; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS