High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863538· OSTI ID:22280548

Gonzalez-Zalba, M. F. ^[1]; Barraud, S.; Jehl, X.; Sanquer, M. ^[2]; Wilmart, Q.; Plaçais, B. ^[3]

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1. Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
2. SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France)
3. Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités P. et M. Curie and Paris-Diderot, 24, rue Lhomond, 75231 Paris Cedex 05 (France)

We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.

• OSTI ID: 22280548
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CAPACITANCE
CHARGE TRANSPORT
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRON TEMPERATURE
INTERFACES
MICROWAVE RADIATION
QUANTIZATION
QUANTUM WIRES
RADIOWAVE RADIATION
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS