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Title: Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.
Authors:
; ; ; ;  [1] ; ; ;  [2] ; ;  [3]
  1. SPINTEC, UMR 8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)
  2. Department of Materials, ETH Zurich, Hönggerbergring 64, CH-8093 Zürich (Switzerland)
  3. Singulus Technologies, Hanauer Landstr, 103, 63796 Kahl am Main (Germany)
Publication Date:
OSTI Identifier:
22280535
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT BORIDES; ELECTRIC CURRENTS; HETEROJUNCTIONS; INTERFACES; IRON COMPOUNDS; LAYERS; L-S COUPLING; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; TANTALUM; TORQUE; TUNNEL EFFECT