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Title: Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells

We demonstrated the control of ferromagnetism in a surface quantum well containing a 5 nm-thick n-type ferromagnetic semiconductor (FMS) (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie temperature (T{sub C}) of the (In,Fe)As layer was effectively changed by up to 12 K (ΔT{sub C}/T{sub C} = 55%). Our calculation using the mean-field Zener theory reveals an unexpectedly large s-d exchange interaction in (In,Fe)As. Our results establish an effective way to control the ferromagnetism in quantum heterostructures of n-type FMSs, as well as require reconsideration on the current understanding of the s-d exchange interaction in narrow gap FMSs.
Authors:
; ;  [1]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 113-8656 Tokyo (Japan)
Publication Date:
OSTI Identifier:
22280533
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; CONTROL; CURIE POINT; EXCHANGE INTERACTIONS; FERROMAGNETISM; INDIUM ARSENIDES; IRON ARSENIDES; LAYERS; MAGNETIC SEMICONDUCTORS; MEAN-FIELD THEORY; N-TYPE CONDUCTORS; QUANTUM WELLS; SURFACES; WAVE FUNCTIONS