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Title: Hydrogen in tin dioxide films and bulk ceramics: An attempt to identify the most hidden impurity

Hydrogen impurities in SnO{sub 2} films and bulk ceramics were investigated in terms of mass transport and electron transport. The hydrogen concentration (n[H]) in these samples was found to be 10{sup 19} cm{sup −3} or higher. Further increase in n[H] could be achieved by annealing the samples in a humid atmosphere. The isotope tracer ({sup 1}H/{sup 2}H exchange) study revealed that a part of the hydrogen in these samples showed rapid migration even at 300 °C. However, electrical measurements revealed that the electron concentration in the samples was much less than n[H]. These results could be explained by assuming the presence of defect-hydrogen complexes.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ; ;  [1] ;  [1] ;  [3]
  1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  3. (MCES), Mailbox S2-13, Tokyo Institute of Technology, 13-4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)
Publication Date:
OSTI Identifier:
22280532
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CERAMICS; CONCENTRATION RATIO; DEUTERIUM; ELECTRONS; HYDROGEN; HYDROGEN 1; HYDROGEN COMPLEXES; TEMPERATURE DEPENDENCE; THIN FILMS; TIN OXIDES