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Title: Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4] ;  [2] ;  [5]
  1. Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Spain)
  2. ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)
  3. Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria)
  4. (Finland)
  5. (Spain)
Publication Date:
OSTI Identifier:
22280526
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GAIN; GRAIN BOUNDARIES; GRAIN SIZE; GRAPHENE; MORPHOLOGY; PERFORMANCE; POLYCRYSTALS