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Title: Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.
Authors:
; ;  [1]
  1. Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)
Publication Date:
OSTI Identifier:
22280525
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM OXIDES; CAPACITORS; GHZ RANGE; MICROWAVE RADIATION; OXIDATION; PLASMA; RELAXATION LOSSES; SUPERCONDUCTING CAVITY RESONATORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THIN FILMS; TUNNEL EFFECT