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Title: Electrical control of interfacial trapping for magnetic tunnel transistor on silicon

We demonstrate an electrical control of an interfacial trapping effect for hot electrons injected in silicon by studying a magnetic tunnel transistor on wafer bonded Si substrate. Below 25 K, hot electrons are trapped at the Cu/Si interface, resulting in collector current suppression through scattering in both parallel and antiparallel magnetic configurations. Consequently, the magneto-current ratio strongly decreases from 300% at 27 K to 30% at 22 K. The application of a relatively small electric field (∼333 V/cm) across the Cu/Si interface is enough to strip the trapped electrons and restore the magneto-current ratio at low temperature. We also present a model taking into account the effects of both electric field and temperature that closely reproduces the experimental results and allows extraction of the trapping binding energy (∼1.6 meV)
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, Boulevard des Aiguillettes, BP 239, 54506 Vandoeuvre (France)
  2. Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026 (China)
Publication Date:
OSTI Identifier:
22280521
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BINDING ENERGY; COPPER; ELECTRIC CURRENTS; ELECTRIC FIELDS; INTERFACES; MAGNETISM; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TRAPPED ELECTRONS; TRAPPING