skip to main content

Title: Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

Rapid thermal annealing in a belt furnace results in a dramatic change of the recombination properties of boron-doped Czochralski silicon: (1) the lifetime degraded by applying a prolonged illumination at room temperature was significantly improved, (2) after subsequent dark recovery, the lifetime has a remarkably high value, and (3) the permanent recovery, by annealing at 185 °C under illumination, is enormously accelerated, and the finally achieved stable lifetime acquires a record value of 1.5 ms, as compared to 110 μs after permanent recovery of not-annealed reference samples.
Authors:
; ; ;  [1] ; ;  [2]
  1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany)
  2. SunEdison, Via Nazionale 59, 39012 Merano (Italy)
Publication Date:
OSTI Identifier:
22280518
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; COMPARATIVE EVALUATIONS; CRYSTAL DOPING; CRYSTAL GROWTH; LIFETIME; RECOMBINATION; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K