Motional characteristics of positively charged muonium defects in In{sub 2}O{sub 3}
- Department of Physics, Texas Tech University, Lubbock, TX 79409-1051 (United States)
- Department of Physics, Istanbul University, Beyazit, 34459 Istanbul (Turkey)
We report on a study of the motional characteristics of positively charged muonium defect centers in In{sub 2}O{sub 3} powder. Zero field muon spin relaxation (ZF-MuSR) measurements were taken from 2 K to 950 K. Results show the positively charged muonium defects occupying two states (Mu{sub 1} and Mu{sub 2}) at low temperatures while a third state (Mu{sub 3}) is introduced as the temperature is increased. Mu{sub 1} is occupied more heavily than Mu{sub 2} at low temperatures by a ratio of ∼8:1. The Mu1 state changes to the Mu{sub 2} state starting at 300 K with site change energy of 0.46±0.11 eV and is essentially not occupied above 500 K. The Mu2 state becomes diffusively mobile with a barrier of 0.78±0.07 eV at 350 K and begins trapping at Mu{sub 3} at 400 K with a capture energy of 0.56±0.019 eV. A metastable region is observed between 500 K and 650 K in which the ratio between Mu{sub 2} and Mu{sub 3} amplitudes and the hop rate of Mu{sub 2} are both roughly constant, implying a steady state trap and release balance between mobile Mu{sub 2} centers and the Mu{sub 3} trap state. Above 650 K, the muonium defects release from the Mu{sub 3} trap to the Mu{sub 2} diffusive state with a dissociation energy of 0.901±0.003 eV. The upper limit on the high temperature diffusion barrier is determined, from the Mu{sub 2} hop rate, to be 0.43±0.03 eV.
- OSTI ID:
- 22280513
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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