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Title: Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering Yonsei University, 134 Shinchon, Seoul 120-749 (Korea, Republic of)
  2. Department of Physics, Columbia University, New York, New York 10027 (United States)
Publication Date:
OSTI Identifier:
22280512
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH; COHERENCE LENGTH; ELECTRONS; FLUCTUATIONS; MAGNETORESISTANCE; MONOCRYSTALS; QUANTUM WIRES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS