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Title: A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme

A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al{sub 0.25}Ga{sub 0.75}As structure. The device lases up to 151‚ÄČK with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L3G1 (Canada)
  2. National Research Council, Blg. M-50, 1200 Montreal Rd., Ottawa, Ontario K1A0R6 (Canada)
  3. Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
Publication Date:
OSTI Identifier:
22280511
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CHARGE CARRIERS; COUPLING; GALLIUM ARSENIDES; HETEROJUNCTIONS; INTERFACES; LASERS; LEAKAGE CURRENT; ROUGHNESS; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT