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Title: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (V{sub DS}) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high V{sub DS} off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (E{sub C} – 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.
Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering, National Central University, Jhongli, Taiwan (China)
Publication Date:
OSTI Identifier:
22280510
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; LAYERS; STRESSES; TRAPPING