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Title: Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses

Abstract

X-ray/optical cross-correlation methods are attracting increasing interest for exploring transient states of matter using ultrashort free-electron laser (FEL) pulses. Our paper shows that in such studies the difference in the penetration depth of the FEL-pump and the infrared (IR) probe pulses become important, in particular, when exploring the changes in the optical properties of solid targets. We discuss the role of interference effects, using a phenomenological model with excited and unperturbed slabs. The reliability of this model was experimentally verified by measuring the transient optical response of free-standing and silicon (Si) supported silicon nitride (Si{sub 3}N{sub 4}) films, simultaneously in reflection and transmission, using s- and p-polarized IR light. The changes in the Si{sub 3}N{sub 4} optical refractive index, induced by the FEL pulses, have fully been described in the frame of the proposed model. The experimental results confirm that the differences, observed in the FEL-induced transient reflectance and transmittance of the Si{sub 3}N{sub 4} targets with different thicknesses, arise from multilayer-like interferometric phenomena.

Authors:
;  [1]; ; ; ; ; ; ;  [1];  [1]
  1. Elettra-Sincrotrone Trieste, SS 14 - km 163.5, I-34149 Basovizza, Trieste (Italy)
Publication Date:
OSTI Identifier:
22280369
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FREE ELECTRON LASERS; INTERFERENCE; PENETRATION DEPTH; PUMPS; REFRACTIVE INDEX; SILICON; SILICON NITRIDES; THIN FILMS; X RADIATION

Citation Formats

Casolari, F., Giangrisostomi, E., Dipartimento di Fisica, Università degli Studi di Trieste, via A. Valerio 2, I-34127 Trieste, Bencivenga, F., Capotondi, F., Manfredda, M., Pedersoli, E., Principi, E., Masciovecchio, C., Kiskinova, M., Mincigrucci, R., and Dipartimento di Fisica, Università degli Studi di Perugia, via A. Pascoli, I-06123 Perugia. Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses. United States: N. p., 2014. Web. doi:10.1063/1.4875906.
Casolari, F., Giangrisostomi, E., Dipartimento di Fisica, Università degli Studi di Trieste, via A. Valerio 2, I-34127 Trieste, Bencivenga, F., Capotondi, F., Manfredda, M., Pedersoli, E., Principi, E., Masciovecchio, C., Kiskinova, M., Mincigrucci, R., & Dipartimento di Fisica, Università degli Studi di Perugia, via A. Pascoli, I-06123 Perugia. Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses. United States. https://doi.org/10.1063/1.4875906
Casolari, F., Giangrisostomi, E., Dipartimento di Fisica, Università degli Studi di Trieste, via A. Valerio 2, I-34127 Trieste, Bencivenga, F., Capotondi, F., Manfredda, M., Pedersoli, E., Principi, E., Masciovecchio, C., Kiskinova, M., Mincigrucci, R., and Dipartimento di Fisica, Università degli Studi di Perugia, via A. Pascoli, I-06123 Perugia. 2014. "Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses". United States. https://doi.org/10.1063/1.4875906.
@article{osti_22280369,
title = {Role of multilayer-like interference effects on the transient optical response of Si{sub 3}N{sub 4} films pumped with free-electron laser pulses},
author = {Casolari, F. and Giangrisostomi, E. and Dipartimento di Fisica, Università degli Studi di Trieste, via A. Valerio 2, I-34127 Trieste and Bencivenga, F. and Capotondi, F. and Manfredda, M. and Pedersoli, E. and Principi, E. and Masciovecchio, C. and Kiskinova, M. and Mincigrucci, R. and Dipartimento di Fisica, Università degli Studi di Perugia, via A. Pascoli, I-06123 Perugia},
abstractNote = {X-ray/optical cross-correlation methods are attracting increasing interest for exploring transient states of matter using ultrashort free-electron laser (FEL) pulses. Our paper shows that in such studies the difference in the penetration depth of the FEL-pump and the infrared (IR) probe pulses become important, in particular, when exploring the changes in the optical properties of solid targets. We discuss the role of interference effects, using a phenomenological model with excited and unperturbed slabs. The reliability of this model was experimentally verified by measuring the transient optical response of free-standing and silicon (Si) supported silicon nitride (Si{sub 3}N{sub 4}) films, simultaneously in reflection and transmission, using s- and p-polarized IR light. The changes in the Si{sub 3}N{sub 4} optical refractive index, induced by the FEL pulses, have fully been described in the frame of the proposed model. The experimental results confirm that the differences, observed in the FEL-induced transient reflectance and transmittance of the Si{sub 3}N{sub 4} targets with different thicknesses, arise from multilayer-like interferometric phenomena.},
doi = {10.1063/1.4875906},
url = {https://www.osti.gov/biblio/22280369}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 104,
place = {United States},
year = {Mon May 12 00:00:00 EDT 2014},
month = {Mon May 12 00:00:00 EDT 2014}
}