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Title: Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×10{sup 10} cm{sup −2} with mobility μ = 1 × 10{sup 6} cm{sup 2}/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Physics and Astronomy, Wayne State University, 666 W. Hancock, Detroit, Michigan 48201 (United States)
  2. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)
Publication Date:
OSTI Identifier:
22280365
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; GALLIUM ARSENIDES; HOLES; INDUCTANCE; MOBILITY; OSCILLATIONS; QUANTUM WELLS