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Title: Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.
Authors:
; ; ; ; ;  [1]
  1. Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)
Publication Date:
OSTI Identifier:
22280325
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AIR; DROPLETS; ETCHING; FABRICATION; HETEROJUNCTIONS; HOLES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES