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Title: To the understanding of the formation of the droplet-epitaxial III-V based nanostructures

In this work, we discuss the evolution of the self-assembling III-V based nanostructures. These nano-structures were prepared by droplet epitaxial technique. The different nanostructures such as quantum dot, quantum ring, double quantum ring, or nanohole form similarly from an initial Ga droplet but under different substrate temperature and various arsenic pressures. Started from few atomic courses, we give here a qualitative description of the key processes for all of the aforementioned nanostructures.
Authors:
 [1]
  1. Institute for Microelectronics and Technology, Óbuda University, Tavaszmező u. 17. H-1084 Budapest, Hungary and Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49. H-1525 Budapest (Hungary)
Publication Date:
OSTI Identifier:
22280322
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ARSENIC; DROPLETS; EPITAXY; GALLIUM; GALLIUM ARSENIDES; QUANTUM DOTS; SUBSTRATES; TEMPERATURE DEPENDENCE