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Title: Site control technique for quantum dots using electron beam induced deposition

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.
Authors:
; ;  [1]
  1. Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)
Publication Date:
OSTI Identifier:
22280321
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CARBON; DESORPTION; DROPLETS; ELECTRON BEAMS; ENERGY BEAM DEPOSITION; INDIUM; INDIUM PHOSPHIDES; MOLECULAR BEAMS; PHOSPHORUS; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE; QUANTUM DOTS; SUBSTRATES