Site control technique for quantum dots using electron beam induced deposition

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878281· OSTI ID:22280321

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi ^[1]

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1. Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

• OSTI ID: 22280321
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CARBON
DESORPTION
DROPLETS
ELECTRON BEAMS
ENERGY BEAM DEPOSITION
INDIUM
INDIUM PHOSPHIDES
MOLECULAR BEAMS
PHOSPHORUS
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
QUANTUM DOTS
SUBSTRATES