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Title: Self-assembly of triangular quantum dots on (111)A substrates by droplet epitaxy

We report the self-assembly of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature. The mechanism of the morphological change is discussed in terms of different growth rates of step edges on a (111)A substrate.
Authors:
; ; ;  [1] ;  [2]
  1. Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)
Publication Date:
OSTI Identifier:
22280320
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DROPLETS; EPITAXY; GALLIUM ARSENIDES; MORPHOLOGICAL CHANGES; QUANTUM DOTS; SUBSTRATES; TEMPERATURE DEPENDENCE