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Title: Recent developments in droplet epitaxy

The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.
Authors:
; ; ; ;  [1] ;  [2]
  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)
Publication Date:
OSTI Identifier:
22280319
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL LATTICES; DROPLETS; EPITAXY; GALLIUM ARSENIDES; OPTICAL PROPERTIES; OPTIMIZATION; QUANTUM DOTS