skip to main content

Title: Fabrication and characterization of nanometric SiOx/SiOy multilayer structures obtained by LPCVD

This work presents the fabrication of nanometric multilayer structures and their characterization by Atomic Force Microscopy, Photoluminescence and Fourier Transform Infra Red spectroscopy. The structures were deposited by Low Pressure Chemical Vapor Deposition (LPCVD). Three types of multilayer structure were fabricated. After the deposition some samples were annealed in N{sub 2} ambient for three hours. It was found that the structures keep the characteristics of each layer.
Authors:
; ;  [1] ;  [2]
  1. National Institute for Astrophysics, Optics and Electronics, L. Erro 1, Tonatzintla Puebla (Mexico)
  2. Center of Res. on Semiconductors Dev. BUAP, Av. San Claudio y 14 Sur CU, Puebla Puebla (Mexico)
Publication Date:
OSTI Identifier:
22280316
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; FABRICATION; FOURIER TRANSFORMATION; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE