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Title: Auto-associative nanoelectronic neural network

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4878315· OSTI ID:22280310
 [1]
  1. Departamento de Engenharia Elétrica - Laboratório de Dispositivos e Circuito Integrado, Universidade de Brasília, CP 4386, CEP 70904-970 Brasília DF (Brazil)

In this paper, an auto-associative neural network using single-electron tunneling (SET) devices is proposed and simulated at low temperature. The nanoelectronic auto-associative network is able to converge to a stable state, previously stored during training. The recognition of the pattern involves decreasing the energy of the input state until it achieves a point of local minimum energy, which corresponds to one of the stored patterns.

OSTI ID:
22280310
Journal Information:
AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

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