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Title: Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure

In this work we present the results obtained from the calculation of the level structure of a n-type delta-doped well Field Effect Transistor when is subjected to hydrostatic pressure. We study the energy level structure as a function of hydrostatic pressure within the range of 0 to 6 kbar for different Schottky barrier height (SBH). We use an analytical expression for the effect of hydrostatic pressure on the SBH and the pressure dependence of the basic parameters of the system as the effective mass m(P) and the dielectric constant ε(P) of GaAs. We found that due to the effects of hydrostatic pressure, in addition to electronic level structure alteration, the profile of the differential capacitance per unit area C{sup −2} is affected.
Authors:
; ;  [1]
  1. Unidad Académica de Física. Universidad Autónoma de Zacatecas. Calzada Solidaridad Esquina con Paseo la Bufa S/N. C.P. 98060, Zacatecas, Zac. (Mexico)
Publication Date:
OSTI Identifier:
22280308
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALCULATION METHODS; CAPACITANCE; DOPED MATERIALS; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ENERGY LEVELS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; N-TYPE CONDUCTORS; PERMITTIVITY; PRESSURE DEPENDENCE