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Title: A single-electron tunneling reset-set flip-flop

In this paper, a new Reset-Set flip-flop fully implemented with single-electron devices is proposed. Its topology derived from NAND gates and was validated at room temperature by simulation. Furthermore, a comparison between the proposed single-electron device and MOS devices in terms of power consumption and occupied area is presented.
Authors:
;  [1]
  1. Department of Electrical Engineering, University of Brasilia, Campus Universitário Darcy Ribeiro, Asa Norte, P.O. Box 4386, Brasilia-DF, 70919-970 (Brazil)
Publication Date:
OSTI Identifier:
22280306
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; ELECTRONS; GATING CIRCUITS; LOGIC CIRCUITS; NANOSTRUCTURES; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K; TOPOLOGY; TUNNEL EFFECT