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Title: Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.
Authors:
;  [1]
  1. Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba, Sendai, 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22280304
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COULOMB FIELD; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FABRICATION; FIELD EFFECT TRANSISTORS; HYDROGEN ADDITIONS; METALLIC GLASSES; NICKEL ALLOYS; NIOBIUM ALLOYS; NONLINEAR PROBLEMS; OSCILLATIONS; TEMPERATURE RANGE 0273-0400 K; ZIRCONIUM ALLOYS