Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878309· OSTI ID:22280304

Fukuhara, Mikio; Yoshida, Hajime ^[1]

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1. Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba, Sendai, 980-8577 (Japan)

We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.

• OSTI ID: 22280304
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COULOMB FIELD
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FABRICATION
FIELD EFFECT TRANSISTORS
HYDROGEN ADDITIONS
METALLIC GLASSES
NICKEL ALLOYS
NIOBIUM ALLOYS
NONLINEAR PROBLEMS
OSCILLATIONS
TEMPERATURE RANGE 0273-0400 K
ZIRCONIUM ALLOYS