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Title: Selective p-i-n photodetector with resonant tunneling

There are different fundamental approaches to designing selective photodetectors, where the selectivity of optical spectra is produced by a filtering aperture. However, manufacturing of multilayered filters is cumbersome for epitaxial technology. In the current study, we offer a novel approach in design of selective photodetectors. A p-i-n photodetector with superlattices in top n-layer becomes transparent for photons where hν<>E{sub ng}+E{sub n1}, the light will be absorbed, simultaneously producing high energy (hot) electrons. The designed thickness of the structure does prevent thermal relaxation of high energy electrons by thus enhancing the selectivity of the photodetector. However the most important selectivity element is the resonant tunneling which does happen only for electrons occupying E{sub n1} energy levels as they transfer to levels E{sub i1}aligned under reverse biasing.
Authors:
; ;  [1]
  1. Advanced Electronic Technology Center, ECE Dept., University of Massachusetts, 1 University Ave, Lowell, MA 01854 (United States)
Publication Date:
OSTI Identifier:
22280300
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTRA; APERTURES; DESIGN; ELECTRONS; EPITAXY; GROUND STATES; HETEROJUNCTIONS; LAYERS; PHOTODETECTORS; PHOTONS; QUANTUM WELLS; SUPERLATTICES; TUNNEL EFFECT; VISIBLE RADIATION