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Title: Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.
Authors:
; ;  [1]
  1. Physics Department, Cinvestav-IPN, Av. IPN 2508, 07360 México, DF (Mexico)
Publication Date:
OSTI Identifier:
22280299
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CADMIUM SELENIDES; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; INTERFACES; PHOTODETECTORS; QUANTUM WELLS; SOLAR CELLS; THICKNESS; THIN FILMS; ZINC SELENIDES