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Title: Dilute antimonide nitride for long wavelength infrared photodetection

InSb{sub 1−x}N{sub x} materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (N{sub In}), interstitial N{sub 2}, also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.
Authors:
; ;  [1]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, 638798b (Singapore)
Publication Date:
OSTI Identifier:
22280298
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1598; Journal Issue: 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; ENERGY GAP; INDIUM ANTIMONIDES; NITROGEN; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY